公开(公告)号：US20170162609A1

公开(公告)日：2017-06-08

申请号：US15368739

申请日：2016-12-05

Applicant: Innolux Corporation

Inventor： Ker-Yih Kao ,  Cheng-Hsu Chou ,  Wang-Cheng Chung

IPC: H01L27/12 ,  G02F1/1341 ,  G02F1/1362 ,  G02F1/1343 ,  H01L29/786 ,  G02F1/1368

CPC classification number: G02F1/136286 ,  G02F1/1368 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/1225 ,  H01L27/124

Abstract: A display panel includes a first substrate, a second substrate and a display medium layer disposed between the first and second substrates. The first substrate includes a plurality of first conducive lines, a plurality of second conducive lines, and a plurality of transistors to define pixel regions. At least one of the transistors includes a gate electrode, a first insulating layer on the gate electrode, an active layer on the first insulating layer, a first electrode and a second electrode on the active layer. The first electrode includes a first transparent conductive material layer and a second transparent conductive material layer formed on the first transparent conductive material layer. The second conducive line connected to the first electrode includes the first and second transparent conductive material layers and a metal layer disposed between the first and second transparent conductive material layers.

公开(公告)号：US20170352689A1

公开(公告)日：2017-12-07

申请号：US15604663

申请日：2017-05-25

Applicant: Innolux Corporation

Inventor： Wang-Cheng Chung

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/786 ,  G02F1/1368 ,  H01L27/32

CPC classification number: H01L27/1225 ,  G02F1/1368 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/7869 ,  H01L29/78696

Abstract: An element substrate and a display device are provided. The element substrate includes a substrate and an element layer, and the element layer is disposed on the substrate, wherein the element layer includes a plurality of active elements, each of the active elements includes a gate, a gate insulating layer, a metal oxide semiconductor layer, a source and a drain. The gate is disposed on the substrate. The gate insulating layer is disposed on the substrate and overlaps the gate. The metal oxide semiconductor layer is disposed on the gate insulating layer. The source and the drain are disposed on the metal oxide semiconductor layer, wherein the source and the drain respectively include a first layer and a second layer, the first layer is between the second layer and the metal oxide semiconductor layer, and the material of the first layer includes titanium nitride. Thereby, during the process of manufacturing the active elements, titanium atoms are not easy to diffuse into the metal oxide semiconductor layer so that the element substrate and the display device have good reliability.

公开(公告)号：US10483285B2

公开(公告)日：2019-11-19

申请号：US15604663

申请日：2017-05-25

Applicant: Innolux Corporation

Inventor： Wang-Cheng Chung

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/417 ,  G02F1/1368 ,  H01L27/32

Abstract: An element substrate and a display device are provided. The element substrate includes a substrate and an element layer, and the element layer is disposed on the substrate, wherein the element layer includes a plurality of active elements, each of the active elements includes a gate, a gate insulating layer, a metal oxide semiconductor layer, a source and a drain. The gate is disposed on the substrate. The gate insulating layer is disposed on the substrate and overlaps the gate. The metal oxide semiconductor layer is disposed on the gate insulating layer. The source and the drain are disposed on the metal oxide semiconductor layer, wherein the source and the drain respectively include a first layer and a second layer, the first layer is between the second layer and the metal oxide semiconductor layer, and the material of the first layer includes titanium nitride. Thereby, during the process of manufacturing the active elements, titanium atoms are not easy to diffuse into the metal oxide semiconductor layer so that the element substrate and the display device have good reliability.