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公开(公告)号：US07897955B2
公开(公告)日：2011-03-01
申请号：US12263562
申请日：2008-11-03
申请人： Insik Jin , Christina Hutchinson , Richard Larson , Lance Stover , Jaewoo Nam , Andrew Habermas
发明人： Insik Jin , Christina Hutchinson , Richard Larson , Lance Stover , Jaewoo Nam , Andrew Habermas
IPC分类号： H01L47/00
CPC分类号： G11C13/0011 , H01L21/0337 , H01L27/2463 , H01L45/085 , H01L45/1273 , H01L45/1675
摘要： Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.
摘要翻译： 可编程金属化存储单元，具有第一金属接触和与金属接触之间的离子导体固体电解质材料的第二金属接触。 第一金属接触件在其上具有延伸到离子导体材料中的细丝布置结构。 在一些实施例中，第二金属接触件还具有在其上延伸到离子导体材料朝向第一细丝布置结构的细丝放置结构。 长丝放置结构可以具有至少约2nm的高度。
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公开(公告)号：US20110117717A1
公开(公告)日：2011-05-19
申请号：US13014941
申请日：2011-01-27
申请人： Insik Jin , Christina Hutchinson , Richard Larson , Lance Stover , Jaewoo Nam , Andrew Habermas
发明人： Insik Jin , Christina Hutchinson , Richard Larson , Lance Stover , Jaewoo Nam , Andrew Habermas
IPC分类号： H01L21/02
CPC分类号： G11C13/0011 , H01L21/0337 , H01L27/2463 , H01L45/085 , H01L45/1273 , H01L45/1675
摘要： Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.
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公开(公告)号：US08124952B2
公开(公告)日：2012-02-28
申请号：US13014935
申请日：2011-01-27
申请人： Insik Jin , Christina Hutchinson , Richard Larson , Lance Stover , Jaewoo Nam , Andrew Habermas
发明人： Insik Jin , Christina Hutchinson , Richard Larson , Lance Stover , Jaewoo Nam , Andrew Habermas
IPC分类号： H01L47/00
CPC分类号： G11C13/0011 , H01L21/0337 , H01L27/2463 , H01L45/085 , H01L45/1273 , H01L45/1675
摘要： Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.
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公开(公告)号：US20110121256A1
公开(公告)日：2011-05-26
申请号：US13014935
申请日：2011-01-27
申请人： Insik Jin , Christina Hutchinson , Richard Larson , Lance Stover , Jaewoo Nam , Andrew Habermas
发明人： Insik Jin , Christina Hutchinson , Richard Larson , Lance Stover , Jaewoo Nam , Andrew Habermas
IPC分类号： H01L45/00
CPC分类号： G11C13/0011 , H01L21/0337 , H01L27/2463 , H01L45/085 , H01L45/1273 , H01L45/1675
摘要： Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.
摘要翻译： 可编程金属化存储单元，具有第一金属接触和与金属接触之间的离子导体固体电解质材料的第二金属接触。 第一金属接触件在其上具有延伸到离子导体材料中的细丝布置结构。 在一些实施例中，第二金属接触件还具有在其上延伸到离子导体材料朝向第一细丝布置结构的细丝放置结构。 长丝放置结构可以具有至少约2nm的高度。
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公开(公告)号：US08124441B2
公开(公告)日：2012-02-28
申请号：US13014941
申请日：2011-01-27
申请人： Insik Jin , Christina Hutchinson , Richard Larson , Lance Stover , Jaewoo Nam , Andrew Habermas
发明人： Insik Jin , Christina Hutchinson , Richard Larson , Lance Stover , Jaewoo Nam , Andrew Habermas
IPC分类号： H01L21/00
CPC分类号： G11C13/0011 , H01L21/0337 , H01L27/2463 , H01L45/085 , H01L45/1273 , H01L45/1675
摘要： Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.
摘要翻译： 可编程金属化存储单元，具有第一金属接触和与金属接触之间的离子导体固体电解质材料的第二金属接触。 第一金属接触件在其上具有延伸到离子导体材料中的细丝布置结构。 在一些实施例中，第二金属接触件还具有在其上延伸到离子导体材料朝向第一细丝布置结构的细丝放置结构。 长丝放置结构可以具有至少约2nm的高度。
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公开(公告)号：US20100110759A1
公开(公告)日：2010-05-06
申请号：US12263562
申请日：2008-11-03
申请人： Insik Jin , Christina Hutchinson , Richard Larson , Lance Stover , Jaewoo Nam , Andrew Habermas
发明人： Insik Jin , Christina Hutchinson , Richard Larson , Lance Stover , Jaewoo Nam , Andrew Habermas
CPC分类号： G11C13/0011 , H01L21/0337 , H01L27/2463 , H01L45/085 , H01L45/1273 , H01L45/1675
摘要： Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.
摘要翻译： 可编程金属化存储单元，具有第一金属接触和与金属接触之间的离子导体固体电解质材料的第二金属接触。 第一金属接触件在其上具有延伸到离子导体材料中的细丝布置结构。 在一些实施例中，第二金属接触件还具有在其上延伸到离子导体材料朝向第一细丝布置结构的细丝放置结构。 长丝放置结构可以具有至少约2nm的高度。
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