公开(公告)号：US20170040793A1

公开(公告)日：2017-02-09

申请号：US15297086

申请日：2016-10-18

Applicant: Intel Corporation

Inventor： AKM AHSAN ,  Walid M. HAFEZ

IPC: H02H9/04 ,  H01L29/08 ,  H01L27/02 ,  H01L29/78

CPC classification number: H02H9/046 ,  H01L27/027 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0847 ,  H01L29/7833 ,  H01L29/7835 ,  H01L29/7851 ,  H01L2924/0002 ,  H02H3/22 ,  H01L2924/00

Abstract: Snapback ESD protection device employing one or more non-planar metal-oxide-semiconductor transistors (MOSFETs) are described. The ESD protection devices may further include lightly-doped extended drain regions, the resistances of which may be capacitively controlled through control gates independent of a gate electrode held at a ground potential. Control gates may be floated or biased to modulate ESD protection device performance. In embodiments, a plurality of core circuits are protected with a plurality of non-planar MOSFET-based ESD protection devices with control gate potentials varying across the plurality.

Abstract translation: 描述采用一个或多个非平面金属氧化物半导体晶体管（MOSFET）的Snapback ESD保护装置。 ESD保护器件还可以包括轻掺杂的延伸漏极区，其电阻可以通过独立于保持在接地电位的栅电极的控制栅电容地控制。 控制栅极可以浮置或偏置以调制ESD保护器件的性能。 在实施例中，多个核心电路被多个非平面的基于MOSFET的ESD保护器件保护，其中控制栅极电位在多个上变化。

公开(公告)号：US20150326007A1

公开(公告)日：2015-11-12

申请号：US14795854

申请日：2015-07-09

Applicant: Intel Corporation

Inventor： AKM AHSAN ,  Walid M. Hafez

IPC: H02H3/22

CPC classification number: H02H9/046 ,  H01L27/027 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0847 ,  H01L29/7833 ,  H01L29/7835 ,  H01L29/7851 ,  H01L2924/0002 ,  H02H3/22 ,  H01L2924/00

Abstract: Snapback ESD protection device employing one or more non-planar metal-oxide-semiconductor transistors (MOSFETs) are described. The ESD protection devices may further include lightly-doped extended drain regions, the resistances of which may be capacitively controlled through control gates independent of a gate electrode held at a ground potential. Control gates may be floated or biased to modulate ESD protection device performance. In embodiments, a plurality of core circuits are protected with a plurality of non-planar MOSFET-based ESD protection devices with control gate potentials varying across the plurality.

Abstract translation: 描述采用一个或多个非平面金属氧化物半导体晶体管（MOSFET）的Snapback ESD保护装置。 ESD保护器件还可以包括轻掺杂的延伸漏极区，其电阻可以通过独立于保持在接地电位的栅电极的控制栅电容地控制。 控制栅极可以浮置或偏置以调制ESD保护器件的性能。 在实施例中，多个核心电路被多个非平面的基于MOSFET的ESD保护器件保护，其中控制栅极电位在多个上变化。