公开(公告)号：US11569231B2

公开(公告)日：2023-01-31

申请号：US16354669

申请日：2019-03-15

Applicant: Intel Corporation

Inventor： Stephen D Snyder ,  Leonard Guler ,  Richard Schenker ,  Michael K Harper ,  Sam Sivakumar ,  Urusa Alaan ,  Stephanie A Bojarski ,  Achala Bhuwalka

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/16 ,  H01L29/20 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/8252 ,  H01L21/8238

Abstract: Techniques are disclosed for non-planar transistors having varying channel widths (Wsi). In some instances, the resulting structure has a fin (or nanowires, nanoribbons, or nanosheets) comprising a first channel region and a second channel region, with a source or drain region between the first channel region and the second channel region. The widths of the respective channel regions are independent of each other, e.g., a first width of the first channel region is different from a second width of the second channel region. The variation in width of a given fin structure may vary in a symmetric fashion or an asymmetric fashion. In an embodiment, a spacer-based forming approach is utilized that allows for abrupt changes in width along a given fin. Sub-resolution fin dimensions are achievable as well.

公开(公告)号：US20200295002A1

公开(公告)日：2020-09-17

申请号：US16354669

申请日：2019-03-15

Applicant: Intel Corporation

Inventor： Stephen D. Snyder ,  Leonard Guler ,  Richard Schenker ,  Michael K. Harper ,  Sam Sivakumar ,  Urusa Alaan ,  Stephanie A. Bojarski ,  Achala Bhuwalka

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/16 ,  H01L29/20 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/8252 ,  H01L21/8238

Abstract: Techniques are disclosed for non-planar transistors having varying channel widths (Wsi). In some instances, the resulting structure has a fin (or nanowires, nanoribbons, or nanosheets) comprising a first channel region and a second channel region, with a source or drain region between the first channel region and the second channel region. The widths of the respective channel regions are independent of each other, e.g., a first width of the first channel region is different from a second width of the second channel region. The variation in width of a given fin structure may vary in a symmetric fashion or an asymmetric fashion. In an embodiment, a spacer-based forming approach is utilized that allows for abrupt changes in width along a given fin. Sub-resolution fin dimensions are achievable as well.