公开(公告)号：US20220157735A1

公开(公告)日：2022-05-19

申请号：US17586672

申请日：2022-01-27

Applicant: Intel Corporation

Inventor： Flavio GRIGGIO ,  Philip YASHAR ,  Anthony V. MULE ,  Gopinath TRICHY ,  Gokul MALYAVANATHAM

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/02 ,  H01L27/02 ,  H01L23/522 ,  H01L23/528

Abstract: An integrated circuit includes: a front end of line (FEOL) circuit including a transistor; and a back end of line circuit above the FEOL circuit and including insulator material having an interconnect feature therein. The interconnect feature includes: a core including copper; a first layer between the insulator material and the core, the first layer being distinct from the core; a second layer between the first layer and the core, the second layer being distinct from the first layer and the core, the second layer including a first metal and a second metal different from the first metal; and a capping member on the core and the second layer, the capping member including the second metal. In an embodiment, the first metal and the second metal are part of a solid solution in the second layer. In an embodiment, the first metal is ruthenium and the second metal is cobalt.