DECOUPLED VIA FILL
    1.
    发明申请
    DECOUPLED VIA FILL 审中-公开

    公开(公告)号:US20200090992A1

    公开(公告)日:2020-03-19

    申请号:US16582923

    申请日:2019-09-25

    Abstract: Techniques are disclosed for providing a decoupled via fill. Given a via trench, a first barrier layer is conformally deposited onto the bottom and sidewalls of the trench. A first metal fill is blanket deposited into the trench. The non-selective deposition is subsequently recessed so that only a portion of the trench is filled with the first metal. The previously deposited first barrier layer is removed along with the first metal, thereby re-exposing the upper sidewalls of the trench. A second barrier layer is conformally deposited onto the top of the first metal and the now re-exposed trench sidewalls. A second metal fill is blanket deposited into the remaining trench. Planarization and/or etching can be carried out as needed for subsequent processing. Thus, a methodology for filling high aspect ratio vias using a dual metal process is provided. Note, however, the first and second fill metals may be the same.

    COPPER INTERCONNECT CLADDING
    3.
    发明申请

    公开(公告)号:US20220157735A1

    公开(公告)日:2022-05-19

    申请号:US17586672

    申请日:2022-01-27

    Abstract: An integrated circuit includes: a front end of line (FEOL) circuit including a transistor; and a back end of line circuit above the FEOL circuit and including insulator material having an interconnect feature therein. The interconnect feature includes: a core including copper; a first layer between the insulator material and the core, the first layer being distinct from the core; a second layer between the first layer and the core, the second layer being distinct from the first layer and the core, the second layer including a first metal and a second metal different from the first metal; and a capping member on the core and the second layer, the capping member including the second metal. In an embodiment, the first metal and the second metal are part of a solid solution in the second layer. In an embodiment, the first metal is ruthenium and the second metal is cobalt.

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