INTERLEAVED POWER DELIVERY TO 3D DIE COMPLEXES ABOVE BRIDGE CHIPLET WITHOUT TSV

    公开(公告)号:US20250112160A1

    公开(公告)日:2025-04-03

    申请号:US18374611

    申请日:2023-09-28

    Abstract: Embodiments disclosed herein include an apparatus for bump translation. In an embodiment, the apparatus includes a substrate with a first bump field with a first height and a first depth on the substrate, where the first depth is orthogonal to the first height, and where the first bump field further comprises a first pitch in a direction of the first height. In an embodiment, the apparatus includes a second bump field with a second height and a second depth on the substrate, where the second depth is orthogonal to the second height, and where the second bump field comprises a second pitch in a direction of the second height, where the second pitch is smaller than the first pitch. Embodiments include a third bump field with a third height and the second depth, where a sum of the second height and the third height is equal to the first height.

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