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公开(公告)号:US11300885B2
公开(公告)日:2022-04-12
申请号:US16045253
申请日:2018-07-25
Applicant: Intel Corporation
Inventor: Robert Bristol , Guojing Zhang , Tristan Tronic , John Magana , Chang Ju Choi , Arvind Sundaramurthy , Richard Schenker
Abstract: Embodiments described herein comprise extreme ultraviolet (EUV) reticles and methods of forming EUV reticles. In an embodiment, the reticle may comprise a substrate and a mirror layer over the substrate. In an embodiment, the mirror layer comprises a plurality of alternating first mirror layers and second mirror layers. In an embodiment, a phase-shift layer is formed over the mirror layer. In an embodiment, openings for printable features and openings for non-printable features are formed into the phase-shift layer. In an embodiment, the non-printable features have a dimension that is smaller than a dimension of the printable features.
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公开(公告)号:US20250164871A1
公开(公告)日:2025-05-22
申请号:US18512842
申请日:2023-11-17
Applicant: Intel Corporation
Inventor: Yoshihiro Tezuka , Annelise Rachel Beck , Chang Ju Choi , Eric Alan Frendberg , Richard Seiji Oka
IPC: G03F1/84 , G01N21/88 , G01N21/956
Abstract: Systems, apparatus, articles of manufacture, and methods to improve detection of defects in photomask blanks are disclosed. An example apparatus includes: interface circuitry; machine readable instructions; and programmable circuitry to at least one of instantiate or execute the machine readable instructions to: identify a first potential defect in a photomask blank based on an intensity value not satisfying a first threshold but satisfying a second threshold, the intensity value based on pixel data associated with a first type of inspection of the photomask blank; and designate the first potential defect as a detected defect based on first coordinates for the first potential defect being within a threshold distance of second coordinates for a second potential defect, the second potential defect identified based on a second type of inspection of the photomask blank.
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