公开(公告)号：US20250006591A1

公开(公告)日：2025-01-02

申请号：US18217022

申请日：2023-06-30

Applicant: Intel Corporation

Inventor： Nischal Arkali Radhakrishna ,  Chinhsuan Chen ,  Sivakumar Venkataraman ,  Somashekar Bangalore Prakash ,  Marni Nabors

IPC: H01L23/48 ,  H01L23/522 ,  H01L23/528 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

Abstract: An integrated circuit (IC) device may include standard cells with multiple parallel paths interconnecting transistors at a device level and over a transistor, in a higher layer of an interconnect structure. The parallel paths may include multiple power supply via contacts on a transistor source structure and multiple supply interconnect lines over the transistor and coupling the transistor to an associated power supply. The parallel paths may include multiple output via contacts on an integrated transistor drain structure and multiple output interconnect lines over a complementary transistor device. The parallel paths may include separate, rather than shared or integrated, adjacent source structures coupled to a same power supply.