公开(公告)号：US12166031B2

公开(公告)日：2024-12-10

申请号：US17131616

申请日：2020-12-22

Applicant: Intel Corporation

Inventor： Biswajeet Guha ,  Brian Greene ,  Daniel Schulman ,  William Hsu ,  Chung-Hsun Lin ,  Curtis Tsai ,  Kevin Fischer

IPC: H01L27/02 ,  H01L23/60 ,  H01L29/87

Abstract: Substrate-less electrostatic discharge (ESD) integrated circuit structures, and methods of fabricating substrate-less electrostatic discharge (ESD) integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a first fin and a second fin protruding from a semiconductor pedestal. An N-type region is in the first and second fins. A P-type region is in the semiconductor pedestal. A P/N junction is between the N-type region and the P-type region, the P/N junction on or in the semiconductor pedestal.