公开(公告)号：US20240222347A1

公开(公告)日：2024-07-04

申请号：US18148338

申请日：2022-12-29

申请人： Intel Corporation

发明人： Sagar Suthram ,  Kuljit S. Bains ,  Wilfred Gomes ,  Don Douglas Josephson ,  Surhud V. Khare ,  Christopher Philip Mozak ,  Randy B. Osborne ,  Pushkar Ranade ,  Abhishek Anil Sharma

IPC分类号： H01L25/18 ,  H01L23/00 ,  H01L23/48 ,  H10B80/00

CPC分类号： H01L25/18 ,  H01L23/481 ,  H01L24/16 ,  H10B80/00 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06541

摘要： In embodiments herein, an integrated circuit device includes a logic die with processor circuitry and a memory die coupled to the logic die. The memory die includes a first memory module comprising a first memory bank and first control circuitry, a second memory module comprising a second memory bank and second control circuitry, and a scribe line on a surface of the memory die between the first memory module and the second memory module. The first memory module is not electrically connected to the second memory module, and each memory module include through silicon vias (TSVs) to electrically connect a top side of the memory module and a bottom side of the memory module (e.g., for three-dimensional stacking in the integrated circuit device).