公开(公告)号：US20200227525A1

公开(公告)日：2020-07-16

申请号：US16831558

申请日：2020-03-26

Applicant: Intel Corporation

Inventor： Dong JI ,  Guangyu HUANG ,  Deepak THIMMEGOWDA

IPC: H01L29/40 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/11573 ,  H01L21/28 ,  H01L29/06

Abstract: A driver circuit for a three-dimensional (3D) memory device has a field management structure electrically coupled to a gate conductor. The field management structure causes an electric field peak in a vertical channel of the 3D memory device when a voltage differential exists between the source conductor and the drain conductor and the gate conductor is not biased. The electrical field peak can adjust the electrical response of the driver circuit, enabling the circuit to have a higher breakdown threshold voltage and improved drive current. Thus, the driver circuit can enable a scalable vertical string driver that is above the memory array instead of under the memory array circuitry.

公开(公告)号：US20200227429A1

公开(公告)日：2020-07-16

申请号：US16831623

申请日：2020-03-26

Applicant: Intel Corporation

Inventor： Dong JI ,  Guangyu HUANG ,  Deepak THIMMEGOWDA

IPC: H01L27/11573 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/06 ,  H01L29/04 ,  H01L29/16 ,  H01L29/22 ,  H01L29/49 ,  H01L29/78 ,  H01L21/02 ,  H01L29/66

Abstract: A driver circuit for a three-dimensional (3D) memory device has a super junction structure as a field management structure. The super junction structure could be referred to as an extended junction structure, which distributes the electrical field of the junction between the vertical channel and the gate conductor for a string driver. The vertical channel includes a channel conductor to connect vertically between a source conductor and a drain conductor. The extended junction structure extends in parallel with the vertical channel conductor, extending vertically toward the drain conductor, having a height greater than a height of the gate conductor.