公开(公告)号：US20220310901A1

公开(公告)日：2022-09-29

申请号：US17211736

申请日：2021-03-24

Applicant: Intel Corporation

Inventor： Kaan OGUZ ,  Tanay GOSAVI ,  Emily WALKER ,  Chia-Ching LIN ,  Ian A. YOUNG

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10

Abstract: Spin orbit torque (SOT) devices with topological insulator (TI) and heavy metal insert are described. In an example, an integrated circuit structure includes a spin orbit coupling (SOC) interconnect including a TI material. A magnetic layer is above the SOC interconnect. An insert layer includes a heavy metal between and in contact with the TI material and the magnetic layer.