PHYSICAL AND ELECTRICAL PROTOCOL TRANSLATION CHIPLETS

    公开(公告)号:US20230100228A1

    公开(公告)日:2023-03-30

    申请号:US17485217

    申请日:2021-09-24

    Abstract: Embodiments disclosed herein include dies and die modules. In an embodiment, a die comprises a substrate with a first surface and a second surface opposite from the first surface. In an embodiment the substrate comprises a semiconductor material. In an embodiment, first bumps with a first pitch are on the first surface of the substrate. In an embodiment, a first layer surrounds the first bumps, where the first layer comprises a dielectric material. In an embodiment, second bumps with a second pitch are on the substrate. In an embodiment, the second pitch is greater than the first pitch. In an embodiment, a second layer surrounds the second bumps, where the second layer comprises a dielectric material.

    SCALABLE AND INTEROPERABLE PHYLESS DIE-TO-DIE IO SOLUTION

    公开(公告)号:US20210398906A1

    公开(公告)日:2021-12-23

    申请号:US16910023

    申请日:2020-06-23

    Abstract: Embodiments disclosed herein include multi-die packages with interconnects between the dies. In an embodiment, an electronic package comprises a package substrate, and a first die over the package substrate. In an embodiment, the first die comprises a first IO bump map, where bumps of the first IO bump map have a first pitch. In an embodiment, the electronic package further comprises a second die over the package substrate. In an embodiment, the second die comprises a second IO bump map, where bumps of the second IO bump map have a second pitch that is different than the first pitch. In an embodiment, the electronic package further comprises interconnects between the first IO bump map and the second IO bump map.

    SKIP LEVEL VIAS IN METALLIZATION LAYERS FOR INTEGRATED CIRCUIT DEVICES

    公开(公告)号:US20230130935A1

    公开(公告)日:2023-04-27

    申请号:US18088476

    申请日:2022-12-23

    Abstract: An integrated circuit device may be formed including an electronic substrate and a metallization structure on the electronic substrate, wherein the metallization structure includes a first level comprising a first dielectric material layer, a second level on the first level, wherein the second level comprises a second dielectric material layer, a third level on the second level, wherein the third level comprises a third dielectric material layer, at least one power/ground structure in the second level, and at least one skip level via extending at least partially through the first dielectric material layer of the first level, through the second dielectric layer of the second level, and at least partially through the third dielectric material layer of the third level, wherein the at least one skip level via comprises a continuous conductive material.

    REPAIR AND PERFORMANCE CHIPLET
    5.
    发明申请

    公开(公告)号:US20230100375A1

    公开(公告)日:2023-03-30

    申请号:US17485198

    申请日:2021-09-24

    Abstract: Embodiments disclosed herein include die modules and electronic packages. In an embodiment, a die module comprises a base die where the base die comprises a functional block. In an embodiment, the die module further comprises a chiplet coupled to the base die proximate to the functional block. In an embodiment, the chiplet comprises similar functionality as the functional block.

Patent Agency Ranking