公开(公告)号：US20210375807A1

公开(公告)日：2021-12-02

申请号：US17404870

申请日：2021-08-17

Applicant: Intel Corporation

Inventor： Charles H. WALLACE ,  Hossam A. ABDALLAH ,  Elliot N. TAN ,  Swaminathan SIVAKUMAR ,  Oleg GOLONZKA ,  Robert M. BIGWOOD

IPC: H01L23/00 ,  G03F7/00 ,  G03F7/40 ,  H01L21/027 ,  G03F1/36 ,  G03F1/70 ,  G03F7/20 ,  H01L21/02 ,  H01L21/263 ,  H01L27/02 ,  G03F1/50 ,  G03F7/16 ,  H01L21/306 ,  H01L21/308

Abstract: Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated, substantially (e.g., fully) represent the original target feature without leaving an unrepresented remainder (e.g., a whole-number quantity of unidirectional target features). The unidirectional target features may be arbitrarily grouped such that, within a grouping, all unidirectional target features share a common target width value. Where multiple such groupings are provided, individual groupings may or may not have the same common target width value. In some cases, a series of reticles is provided, each reticle having a mask pattern correlating to a grouping of unidirectional target features. Exposure of a photoresist material via the aggregated series of reticles substantially (e.g., fully) produces the original target feature/pattern. The pattern decomposition techniques may be integrated into any number of patterning processes, such as litho-freeze-litho-etch and litho-etch-litho-etch patterning processes.