专利检索 ap:("Intel Corporation") AND inv:"Hsiao-Yu CHANG" 第 1 页

1.

发明申请
FLASH MEMORY CHIP THAT MODULATES ITS PROGRAM STEP VOLTAGE AS A FUNCTION OF CHIP TEMPERATURE 有权

公开(公告)号：US20210304820A1

公开(公告)日：2021-09-30

申请号：US16828843

申请日：2020-03-24

申请人： Intel Corporation

发明人： Arash HAZEGHI , Pranav KALAVADE , Rohit S. SHENOY , Hsiao-Yu CHANG

IPC分类号： G11C16/10 , G06F3/06 , G01K3/00

摘要： A method is described. The method includes performing the following on a flash memory chip: measuring a temperature of the flash memory chip; and, changing a program step size voltage of the flash memory chip because the temperature of the flash memory chip has changed.