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公开(公告)号:US20210304820A1
公开(公告)日:2021-09-30
申请号:US16828843
申请日:2020-03-24
Applicant: Intel Corporation
Inventor: Arash HAZEGHI , Pranav KALAVADE , Rohit S. SHENOY , Hsiao-Yu CHANG
Abstract: A method is described. The method includes performing the following on a flash memory chip: measuring a temperature of the flash memory chip; and, changing a program step size voltage of the flash memory chip because the temperature of the flash memory chip has changed.