公开(公告)号：US20210364474A1

公开(公告)日：2021-11-25

申请号：US16881025

申请日：2020-05-22

Applicant: Intel Corporation

Inventor： Mario Pacheco ,  Odissei Touzanov ,  Jacob Woolsey ,  Deepak Goyal

IPC: G01N29/22 ,  G01R31/28 ,  G01N29/04

Abstract: According to various examples, a method for non-destructive detection of defects in a semiconductor die is described. The method may include positioning an emitter above the semiconductor die. The method may include generating an emitted wave using the emitter that is directed to a focal point on a surface of the die. The method may include generating a reflected wave from the focal point. The focal point may act as a point source reflecting the emitted wave. The method may include positioning a receiver above the die to receive the reflected wave. The method may also include measuring the reflected wave to detect modulations in amplitude in the reflected wave.

公开(公告)号：US11346818B2

公开(公告)日：2022-05-31

申请号：US16881025

申请日：2020-05-22

Applicant: Intel Corporation

Inventor： Mario Pacheco ,  Odissei Touzanov ,  Jacob Woolsey ,  Deepak Goyal

IPC: G01R31/28 ,  G01N29/22 ,  G01N29/04

Abstract: According to various examples, a method for non-destructive detection of defects in a semiconductor die is described. The method may include positioning an emitter above the semiconductor die. The method may include generating an emitted wave using the emitter that is directed to a focal point on a surface of the die. The method may include generating a reflected wave from the focal point. The focal point may act as a point source reflecting the emitted wave. The method may include positioning a receiver above the die to receive the reflected wave. The method may also include measuring the reflected wave to detect modulations in amplitude in the reflected wave.