公开(公告)号：US20240203978A1

公开(公告)日：2024-06-20

申请号：US18085116

申请日：2022-12-20

Applicant: Intel Corporation

Inventor： Samuel James BADER ,  Nachiket Venkappayya DESAI ,  Harish KRISHNAMURTHY ,  Han Wui THEN ,  William J. LAMBERT ,  Jingshu YU

IPC: H01L27/02 ,  H01L29/16 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L27/0266 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66462 ,  H01L29/7786

Abstract: Layer transfer for Gallium nitride (GaN) integrated circuit technology is described. In an example, an integrated circuit structure includes a GaN device on or above a substrate, the GaN device including a source, a gate and a drain. A silicon-based clamp structure is above substrate, the silicon-based clamp structure over the GaN device in a region that overlaps the source and the gate of the GaN device.