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    ELECTROLESS FILLED CONDUCTIVE STRUCTURES
    2.
    发明申请
    ELECTROLESS FILLED CONDUCTIVE STRUCTURES 审中-公开
    电镀填充导电结构

    公开(公告)号：US20150371949A1

    公开(公告)日：2015-12-24

    申请号：US14841018

    申请日：2015-08-31

    Applicant: INTEL CORPORATION

    Inventor： Daniel J. Zierath ,  Shaestagir Chowdhury ,  Chi-Hwa Tsang

    IPC: H01L23/522

    CPC classification number: H01L23/5226 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/485 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5384 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Techniques are disclosed that enable interconnects, vias, metal gates, and other conductive features that can be formed through electroless material deposition techniques. In some embodiments, the techniques employ electroless fill in conjunction with high growth rate selectivity between an electroless nucleation material (ENM) and electroless suppression material (ESM) to generate bottom-up or otherwise desired fill pattern of such features. Suitable ENM may be present in the underlying or otherwise existing structure, or may be provided. The ESM is provisioned so as to prevent or otherwise inhibit nucleation at the ESM covered areas of the feature, which in turn prevents or otherwise slows down the rate of electroless growth on those areas. As such, the electroless growth rate on the ENM sites is higher than the electroless growth rate on the ESM sites.

    Abstract translation: 公开了能够通过无电解材料沉积技术形成的互连，通孔，金属栅极和其它导电特征的技术。 在一些实施方案中，该技术采用无电填料结合无电成核材料（ENM）和无电压抑制材料（ESM）之间的高生长速率选择性，以产生这些特征的自下而上或其他期望的填充图案。 合适的ENM可能存在于底层或其他现有结构中，或可提供。 ESM的设置是为了防止或以其他方式抑制ESM覆盖的特征区域的成核，这又防止或以其他方式减缓这些区域的无电生长速率。 因此，ENM场地的无电增长率高于ESM站点上的无电增长率。

    Diffusion barriers
    3.
    发明授权
    Diffusion barriers 有权

    公开(公告)号：US10651082B2

    公开(公告)日：2020-05-12

    申请号：US16081713

    申请日：2016-03-31

    Applicant: Intel Corporation

    Inventor： Daniel J. Zierath ,  Jason A. Farmer ,  Daniel B. Bergstrom

    IPC: H01L21/768 ,  H01L23/532 ,  C23C16/34 ,  C23C16/455 ,  H01L21/285

    Abstract: In an example, there is disclosed a chemical compound, including a transition metal, a post-transition metal, a metalloid, and a nonmetal. By way of non-limiting example, the post-transition metal may be aluminum. The transition metal is selected from the group consisting of tungsten, tantalum, hafnium, molybdenum, niobium, zirconium, vanadium, and titanium. The metalloid may be boron or silicon. The nonmetal may be carbon or nitrogen. The compound may be used, for example, as a barrier material in an integrated circuit.

    DIFFUSION BARRIERS
    7.
    发明申请
    DIFFUSION BARRIERS 审中-公开

    公开(公告)号：US20190088538A1

    公开(公告)日：2019-03-21

    申请号：US16081713

    申请日：2016-03-31

    Applicant: Intel Corporation

    Inventor： Daniel J. Zierath ,  Jason A. Farmer ,  Daniel B. Bergstrom

    IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  C23C16/34 ,  C23C16/455

    Abstract: In an example, there is disclosed a chemical compound, including a transition metal, a post-transition metal, a metalloid, and a nonmetal. By way of non-limiting example, the post-transition metal may be aluminum. The transition metal is selected from the group consisting of tungsten, tantalum, hafnium, molybdenum, niobium, zirconium, vanadium, and titanium. The metalloid may be boron or silicon. The nonmetal may be carbon or nitrogen. The compound may be used, for example, as a barrier material in an integrated circuit.

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