公开(公告)号：US20200321446A1

公开(公告)日：2020-10-08

申请号：US16635739

申请日：2017-09-28

Applicant: Intel Corporation

Inventor： Seiyon KIM ,  Uygar E. AVCI ,  Joshua M. HOWARD ,  Ian A. YOUNG ,  Daniel H. MORRIS

IPC: H01L29/66 ,  H01L29/51

Abstract: Field effect transistors having a ferroelectric or antiferroelectric gate dielectric structure are described. In an example, an integrated circuit structure includes a semiconductor channel structure includes a monocrystalline material. A gate dielectric is over the semiconductor channel structure. The gate dielectric includes a ferroelectric or antiferroelectric polycrystalline material layer. A gate electrode has a conductive layer on the ferroelectric or antiferroelectric polycrystalline material layer, the conductive layer including a metal. A first source or drain structure is at a first side of the gate electrode. A second source or drain structure is at a second side