公开(公告)号：US20220406907A1

公开(公告)日：2022-12-22

申请号：US17821209

申请日：2022-08-22

Applicant: Intel Corporation

Inventor： Abhishek A. Sharma ,  Tahir Ghani ,  Jack T. Kavalieros ,  Gilbert W. Dewey ,  Van H. Le ,  Lawrence D. Wong ,  Christopher J. Jezewski

IPC: H01L29/417 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L29/49 ,  H01L23/29 ,  H01L29/78 ,  H01L29/45

Abstract: Disclosed herein are transistor electrode-channel arrangements, and related methods and devices. For example, in some embodiments, a transistor electrode-channel arrangement may include a channel material, source/drain electrodes provided over the channel material, and a sealant at least partially enclosing one or more of the source/drain electrodes, wherein the sealant includes one or more metallic conductive materials.

公开(公告)号：US20190259844A1

公开(公告)日：2019-08-22

申请号：US15899590

申请日：2018-02-20

Applicant: Intel Corporation

Inventor： Abhishek A. Sharma ,  Tahir Ghani ,  Jack T. Kavalieros ,  Gilbert Dewey ,  Van H. Le ,  Lawrence D. Wong ,  Christopher J. Jezewski

IPC: H01L29/417 ,  H01L29/786 ,  H01L23/29 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66

Abstract: Disclosed herein are transistor electrode-channel arrangements, and related methods and devices. For example, in some embodiments, a transistor electrode-channel arrangement may include a channel material, source/drain electrodes provided over the channel material, and a sealant at least partially enclosing one or more of the source/drain electrodes, wherein the sealant includes one or more metallic conductive materials.

公开(公告)号：US11522059B2

公开(公告)日：2022-12-06

申请号：US15899590

申请日：2018-02-20

Applicant: Intel Corporation

Inventor： Abhishek A. Sharma ,  Tahir Ghani ,  Jack T. Kavalieros ,  Gilbert W. Dewey ,  Van H. Le ,  Lawrence D. Wong ,  Christopher J. Jezewski

IPC: H01L29/417 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/45 ,  H01L23/29 ,  H01L29/24 ,  H01L29/22

Abstract: Disclosed herein are transistor electrode-channel arrangements, and related methods and devices. For example, in some embodiments, a transistor electrode-channel arrangement may include a channel material, source/drain electrodes provided over the channel material, and a sealant at least partially enclosing one or more of the source/drain electrodes, wherein the sealant includes one or more metallic conductive materials.