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公开(公告)号:US20220406907A1
公开(公告)日:2022-12-22
申请号:US17821209
申请日:2022-08-22
Applicant: Intel Corporation
Inventor: Abhishek A. Sharma , Tahir Ghani , Jack T. Kavalieros , Gilbert W. Dewey , Van H. Le , Lawrence D. Wong , Christopher J. Jezewski
IPC: H01L29/417 , H01L29/786 , H01L29/66 , H01L29/423 , H01L29/49 , H01L23/29 , H01L29/78 , H01L29/45
Abstract: Disclosed herein are transistor electrode-channel arrangements, and related methods and devices. For example, in some embodiments, a transistor electrode-channel arrangement may include a channel material, source/drain electrodes provided over the channel material, and a sealant at least partially enclosing one or more of the source/drain electrodes, wherein the sealant includes one or more metallic conductive materials.
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公开(公告)号:US20190259844A1
公开(公告)日:2019-08-22
申请号:US15899590
申请日:2018-02-20
Applicant: Intel Corporation
Inventor: Abhishek A. Sharma , Tahir Ghani , Jack T. Kavalieros , Gilbert Dewey , Van H. Le , Lawrence D. Wong , Christopher J. Jezewski
IPC: H01L29/417 , H01L29/786 , H01L23/29 , H01L29/423 , H01L29/49 , H01L29/66
Abstract: Disclosed herein are transistor electrode-channel arrangements, and related methods and devices. For example, in some embodiments, a transistor electrode-channel arrangement may include a channel material, source/drain electrodes provided over the channel material, and a sealant at least partially enclosing one or more of the source/drain electrodes, wherein the sealant includes one or more metallic conductive materials.
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公开(公告)号:US11522059B2
公开(公告)日:2022-12-06
申请号:US15899590
申请日:2018-02-20
Applicant: Intel Corporation
Inventor: Abhishek A. Sharma , Tahir Ghani , Jack T. Kavalieros , Gilbert W. Dewey , Van H. Le , Lawrence D. Wong , Christopher J. Jezewski
IPC: H01L29/417 , H01L29/786 , H01L29/66 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/45 , H01L23/29 , H01L29/24 , H01L29/22
Abstract: Disclosed herein are transistor electrode-channel arrangements, and related methods and devices. For example, in some embodiments, a transistor electrode-channel arrangement may include a channel material, source/drain electrodes provided over the channel material, and a sealant at least partially enclosing one or more of the source/drain electrodes, wherein the sealant includes one or more metallic conductive materials.
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