公开(公告)号：US20250112147A1

公开(公告)日：2025-04-03

申请号：US18375306

申请日：2023-09-29

Applicant: Intel Corporation

Inventor： Xi Li ,  Chuanzhao Yu ,  Yazan Hejazin ,  Marco Bresciani ,  Hyun Yoon ,  Lichung Chang

IPC: H01L23/522 ,  H01L23/48 ,  H01L27/06

Abstract: An integrated circuit device with front- and back-side metals may include coils in interconnect structures on one or both sides of a semiconductor substrate. The coil(s) may include vias extending through (and coupling wires on both sides of) the substrate. The coil(s) may include multiple turns or loops. The coil(s) may be on one side, and parallel to, the substrate. Coils may be orthogonal or parallel to each other. A resistor may have smaller resistor segments on both sides of the substrate coupled by through-substrate vias. A capacitor may utilize through-substrate vias as plates. Through-substrate vias may inhibit eddy currents in the substrate. A cage of wires and through-substrate vias may shield devices within the cage from interfering fields external to the cage.