公开(公告)号：US10256395B2

公开(公告)日：2019-04-09

申请号：US15735395

申请日：2015-06-19

Applicant: Intel Corporation

Inventor： Daniel R. Lamborn ,  Oleg Golonzka ,  Christopher J. Wiegand ,  Philip E. Heil ,  M D Tofizur Rahman ,  Rebecca J. Castellano ,  Tarun Bansal

IPC: H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L27/22 ,  H01L43/10

Abstract: An embodiment includes an apparatus comprising: a magnetic tunnel junction (MTJ), between first and second electrodes, comprising a dielectric layer between fixed and free layers; a dielectric film directly contacting sidewalls of the first electrode; and a metallic layer coupled to the sidewalls via the dielectric film; wherein (a) a vertical axis intersects the first and second electrodes and the MTJ but not the metallic layer, (b) a first horizontal axis intersects the metallic layer, the dielectric film, and the first electrode; and (c) a second horizontal axis, between the first horizontal axis and the MTJ, intersects the dielectric film and the first electrode but not the capping layer. Other embodiments are described herein.