公开(公告)号：US20240222475A1

公开(公告)日：2024-07-04

申请号：US18148617

申请日：2022-12-30

Applicant: Intel Corporation

Inventor： Punyashloka Debashis ,  Dmitri Evgenievich Nikonov ,  Ian Alexander Young ,  John J. Plombon ,  Scott B. Clendenning ,  Mahendra DC

IPC: H01L29/66 ,  H01F10/12 ,  H01F10/193 ,  H01F10/32 ,  H10N52/01

CPC classification number: H01L29/66984 ,  H01F10/12 ,  H01F10/1933 ,  H01F10/329 ,  H10N52/01

Abstract: Technologies for high-performance magnetoelectric spin-orbit (MESO) logic structures are disclosed. In the illustrative embodiment, the spin-orbit coupling layer of a MESO logic structure is a high-entropy perovskite. The use of a high-entropy perovskite provides versatility through tunability, as there is a wide range of possible combinations. Additional layers of the MESO logic structure may also be perovskites, such as the magnetoelectric layer and ferromagnetic layer. The various perovskite layers may be epitaxially compatible, allowing for growth of high-quality layers.