公开(公告)号：US20240113194A1

公开(公告)日：2024-04-04

申请号：US17957580

申请日：2022-09-30

Applicant: Intel Corporation

Inventor： Mekha George ,  Seda Cekli ,  Kilhyun Bang ,  Krishna Ganesan

IPC: H01L29/423 ,  H01L21/311 ,  H01L27/088 ,  H01L29/06 ,  H01L29/786

CPC classification number: H01L29/42392 ,  H01L21/31116 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/78696

Abstract: Materials and techniques for recessing heterogenous materials in integrated circuit (IC) dies. A first etch may reveal a surface at a desired depth, and a second etch may remove material laterally to reveal sidewalls down to the desired depth of the recess. The first etch may be a cyclical etch, and the second etch may be a continuous etch. The first and second etches may occur in a same chamber. The first and second etches may each be selective to materials with similarities. An IC die may have different, substantially coplanar materials at a recessed surface between and below sidewalls of another material. The recess may have squared profile. The recess may be over transistor structures.