公开(公告)号：US20240113194A1

公开(公告)日：2024-04-04

申请号：US17957580

申请日：2022-09-30

Applicant: Intel Corporation

Inventor： Mekha George ,  Seda Cekli ,  Kilhyun Bang ,  Krishna Ganesan

IPC: H01L29/423 ,  H01L21/311 ,  H01L27/088 ,  H01L29/06 ,  H01L29/786

CPC classification number: H01L29/42392 ,  H01L21/31116 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/78696

Abstract: Materials and techniques for recessing heterogenous materials in integrated circuit (IC) dies. A first etch may reveal a surface at a desired depth, and a second etch may remove material laterally to reveal sidewalls down to the desired depth of the recess. The first etch may be a cyclical etch, and the second etch may be a continuous etch. The first and second etches may occur in a same chamber. The first and second etches may each be selective to materials with similarities. An IC die may have different, substantially coplanar materials at a recessed surface between and below sidewalls of another material. The recess may have squared profile. The recess may be over transistor structures.

公开(公告)号：US20250098242A1

公开(公告)日：2025-03-20

申请号：US18467906

申请日：2023-09-15

Applicant: Intel Corporation

Inventor： Seda Cekli ,  Makram Abd El Qader ,  Sudipto Naskar ,  Anh Phan ,  Rishabh Mehandru

IPC: H01L29/06 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78

Abstract: IC structures with air gap insulation in place of gate spacers are disclosed. An example IC structure includes a transistor comprising a channel region and a source or drain (S/D) region, a gate structure coupled to the channel region and comprising a gate electrode material and a first electrically conductive material, a S/D contact structure coupled to the S/D region and comprising a second electrically conductive material, a gap between the gate structure and the S/D contact structure, and a liner material on at least a portion of a sidewall of the gap, the liner material comprising aluminum and oxygen.

公开(公告)号：US20250098239A1

公开(公告)日：2025-03-20

申请号：US18470493

申请日：2023-09-20

Applicant: Intel Corporation

Inventor： Seda Cekli ,  Makram Abd El Qader ,  Aaron D. Lilak ,  Anh Phan

IPC: H01L29/06 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/08 ,  H01L29/423 ,  H01L29/778 ,  H01L29/786

Abstract: IC structures with air gap insulation in place of gate spacers are disclosed. An example IC structure includes a transistor comprising a channel region and a S/D region, a gate structure coupled to the channel region and comprising a gate electrode material and a first electrically conductive material, a S/D contact structure coupled to the S/D region and comprising a second electrically conductive material, a gap between the gate structure and the S/D contact structure, and a liner material over at least a portion of a sidewall of the region below the contact structure, the liner material comprising aluminum and oxygen.