公开(公告)号：US10453829B2

公开(公告)日：2019-10-22

申请号：US15625350

申请日：2017-06-16

Applicant: Intel Corporation

Inventor： Merri Lyn Carlson ,  Hongbin Zhu ,  Gordon A. Haller ,  James E. Davis ,  Kevin G. Duesman ,  James Mathew ,  Michael P. Violette

IPC: H01L27/11556 ,  H01L25/10 ,  H01L27/11529 ,  H01L27/11548

Abstract: In one embodiment, an apparatus comprises a tier comprising alternating first and second layers, wherein the first layers comprise a first conductive material and the second layers comprise a first dielectric material; a lower metal layer below the tier; a bond pad above the tier, the bond pad coupled to the lower metal layer by a via extending through the tier; and a first channel formed through a portion of the tier, the first channel surrounding the via, the first channel comprising a second dielectric material.

公开(公告)号：US20180366453A1

公开(公告)日：2018-12-20

申请号：US15625350

申请日：2017-06-16

Applicant: Intel Corporation

Inventor： Merri Lyn Carlson ,  Hongbin Zhu ,  Gordon A. Haller ,  James E. Davis ,  Kevin G. Duesman ,  James Mathew ,  Michael P. Violette

IPC: H01L25/10 ,  H01L27/11556 ,  H01L27/11524

CPC classification number: H01L25/105 ,  H01L27/11529 ,  H01L27/11548 ,  H01L27/11556

Abstract: In one embodiment, an apparatus comprises a tier comprising alternating first and second layers, wherein the first layers comprise a first conductive material and the second layers comprise a first dielectric material; a lower metal layer below the tier; a bond pad above the tier, the bond pad coupled to the lower metal layer by a via extending through the tier; and a first channel formed through a portion of the tier, the first channel surrounding the via, the first channel comprising a second dielectric material.