REDUCTION OF LATENCY IMPACT OF ON-DIE ERROR CHECKING AND CORRECTION (ECC)

    公开(公告)号:US20210224155A1

    公开(公告)日:2021-07-22

    申请号:US17225777

    申请日:2021-04-08

    Abstract: A memory device having on-die error checking and correction (ECC) circuitry can provide uncorrected data in response to a read command. The ECC circuitry can perform error correction for errors detected, generating the corrected data in parallel with providing the uncorrected data. The memory device stores the corrected data internally to the memory device. When an error is detected, the memory device provides an indication to the memory controller, which can then request the corrected data.

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