公开(公告)号：US20240332166A1

公开(公告)日：2024-10-03

申请号：US18129873

申请日：2023-04-02

Applicant: Intel Corporation

Inventor： Seda CEKLI ,  Sudipto NASKAR ,  Ananya DUTTA ,  Supanee SUKRITTANON ,  Akshit PEER ,  Navneethakrishnan SALIVATI ,  Jeffery BIELEFELD ,  Makram ABD EL QADER ,  Mauro J. KOBRINSKY ,  Sachin VAIDYA

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/5226 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/53295

Abstract: Integrated circuit structures having air gaps are described. In an example, an integrated circuit structure includes alternating conductive lines and air gaps above a first dielectric layer. A dielectric structure is between adjacent ones of the conductive lines and over the air gaps. A first etch stop layer is on the dielectric structure but not on the conductive lines. A second etch stop layer is on the first etch stop layer and on the conductive lines. A second dielectric layer is above the second etch stop layer. A conductive via structure is in the second dielectric layer, in the second etch stop layer, and on one of the conductive lines.