公开(公告)号：US20240332166A1

公开(公告)日：2024-10-03

申请号：US18129873

申请日：2023-04-02

Applicant: Intel Corporation

Inventor： Seda CEKLI ,  Sudipto NASKAR ,  Ananya DUTTA ,  Supanee SUKRITTANON ,  Akshit PEER ,  Navneethakrishnan SALIVATI ,  Jeffery BIELEFELD ,  Makram ABD EL QADER ,  Mauro J. KOBRINSKY ,  Sachin VAIDYA

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/5226 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/53295

Abstract: Integrated circuit structures having air gaps are described. In an example, an integrated circuit structure includes alternating conductive lines and air gaps above a first dielectric layer. A dielectric structure is between adjacent ones of the conductive lines and over the air gaps. A first etch stop layer is on the dielectric structure but not on the conductive lines. A second etch stop layer is on the first etch stop layer and on the conductive lines. A second dielectric layer is above the second etch stop layer. A conductive via structure is in the second dielectric layer, in the second etch stop layer, and on one of the conductive lines.

公开(公告)号：US20230187395A1

公开(公告)日：2023-06-15

申请号：US17547745

申请日：2021-12-10

Applicant: Intel Corporation

Inventor： Nafees A. KABIR ,  Jeffery BIELEFELD ,  Manish CHANDHOK ,  Brennen MUELLER ,  Richard VREELAND

IPC: H01L23/00

CPC classification number: H01L24/08 ,  H01L24/05 ,  H01L2224/08146 ,  H01L2224/05647 ,  H01L2224/02251 ,  H01L2224/0226

Abstract: Embodiments herein relate to systems, apparatuses, or processes for hybrid bonding two dies, where at least one of the dies has a top layer to be hybrid bonded includes one or more copper pad and a top oxide layer surrounding the one or more copper pad, with another layer beneath the oxide layer that includes carbon atoms. The top oxide layer and the other carbide layer beneath may form a combination gradient layer that goes from a top of the top layer that is primarily an oxide to a bottom of the other layer that is primarily a carbide. The top oxide layer may be performed by exposing the carbide layer to a plasma treatment. Other embodiments may be described and/or claimed.