公开(公告)号：US20240154324A1

公开(公告)日：2024-05-09

申请号：US18549356

申请日：2021-06-24

Applicant: Intel Corporation

Inventor： Sreenivas KASTURI ,  Xi LI ,  Gregory CHANCE ,  Wayne BALLANTYNE ,  Bruce GEREN ,  Peter PAWLIUK ,  Nebil TANZI

IPC: H01Q25/00 ,  H01Q1/22 ,  H01Q1/24 ,  H01Q21/08 ,  H01Q21/28

CPC classification number: H01Q25/002 ,  H01Q1/2266 ,  H01Q1/243 ,  H01Q21/08 ,  H01Q21/28

Abstract: Disclosed herein are antenna systems, methods, and devices. The device includes a first portion including a first antenna array; and a second portion including a second antenna array, wherein the first portion and the second portion are movable with respect to one another, and wherein the first antenna array and the second antenna array are arranged such that in a first relative position of the first portion and the second portion with respect to one another the first antenna array and the second antenna array operate in combination with one another, and in a second relative position of the first portion and the second portion with respect to one another the first antenna array and the second antenna array operate independently of one another.

公开(公告)号：US20180358406A1

公开(公告)日：2018-12-13

申请号：US15778603

申请日：2015-12-24

Applicant: INTEL CORPORATION

Inventor： Bruce A. BLOCK ,  Paul B. FISCHER ,  Nebil TANZI ,  Gregory CHANCE ,  Han Wui THEN ,  Sansaptak DASGUPTA ,  Marko RADOSAVLJEVIC

IPC: H01L27/20 ,  H03H9/17 ,  H03H3/02 ,  H03H9/56 ,  H01L29/20 ,  H01L29/778 ,  H01L29/66

Abstract: Techniques to fabricate an RF filter using 3 dimensional island integration are described. A donor wafer assembly may have a substrate with a first and second side. A first side of a resonator layer, which may include a plurality of resonator circuits, may be coupled to the first side of the substrate. A weak adhesive layer may be coupled to the second side of the resonator layer, followed by a low-temperature oxide layer and a carrier wafer. A cavity in the first side of the resonator layer may expose an electrode of the first resonator circuit. An RF assembly may have an RF wafer having a first and a second side, where the first side may have an oxide mesa coupled to an oxide layer. A first resonator circuit may be then coupled to the oxide mesa of the first side of the RF wafer.