公开(公告)号：US11551956B2

公开(公告)日：2023-01-10

申请号：US16911466

申请日：2020-06-25

Applicant: Intel Corporation

Inventor： Chandrashekara Shashank Kaira ,  Phillip C. Miller ,  Purushotham Kaushik Muthur Srinath ,  Deepak Goyal

IPC: H01L21/67 ,  G01J5/00

Abstract: According to the various examples, a fully integrated system and method for failure analysis using RF-based thermometry enable the detection and location of defects and failures in complex semiconductor packaging architectures. The system provides synchronous amplified RF signals to generate unique thermal signatures at defect locations based on dielectric relaxation loss and heating.

公开(公告)号：US20210407833A1

公开(公告)日：2021-12-30

申请号：US16911466

申请日：2020-06-25

Applicant: Intel Corporation

Inventor： Chandrashekara Shashank Kaira ,  Phillip C. Miller ,  Purushotham Kaushik Muthur Srinath ,  Deepak Goyal

IPC: H01L21/67 ,  G01J5/00

Abstract: According to the various examples, a fully integrated system and method for failure analysis using RF-based thermometry enable the detection and location of defects and failures in complex semiconductor packaging architectures. The system provides synchronous amplified RF signals to generate unique thermal signatures at defect locations based on dielectric relaxation loss and heating.