公开(公告)号：US20190006319A1

公开(公告)日：2019-01-03

申请号：US15639640

申请日：2017-06-30

Applicant: INTEL CORPORATION

Inventor： OMKAR KARHADE ,  CHRISTOPHER L. RUMER ,  NITIN DESHPANDE ,  ROBERT M. NICKERSON

IPC: H01L25/065 ,  H01L25/00 ,  H01L23/31 ,  H01L23/00 ,  H01L21/56 ,  H01L21/54 ,  H01L23/04

Abstract: Systems and methods for improving heat distribution and heat removal efficiency in PoP semiconductor packages are provided. A PoP semiconductor package includes a first semiconductor package that is physically, communicably, and conductively coupled to a stacked second semiconductor package. A gap forms between the upper surface of the first semiconductor package and the lower surface of the second semiconductor package. Additionally, interstitial gaps form between each of the PoP semiconductor packages disposed on an organic substrate. A curable fluid material, such as a molding compound, may be flowed both in the interstitial spaces between the PoP semiconductor packages and into the gap between the upper surface of the first semiconductor package and the lower surface of the second semiconductor package.

公开(公告)号：US20190385983A1

公开(公告)日：2019-12-19

申请号：US16552459

申请日：2019-08-27

Applicant: Intel Corporation

Inventor： OMKAR KARHADE ,  CHRISTOPHER L. RUMER ,  NITIN DESHPANDE ,  ROBERT M. NICKERSON

IPC: H01L25/065 ,  H01L25/00 ,  H01L23/31 ,  H01L23/00 ,  H01L21/56 ,  H01L21/54 ,  H01L23/04

Abstract: Systems and methods for improving heat distribution and heat removal efficiency in PoP semiconductor packages are provided. A PoP semiconductor package includes a first semiconductor package that is physically, communicably, and conductively coupled to a stacked second semiconductor package. A gap forms between the upper surface of the first semiconductor package and the lower surface of the second semiconductor package. Additionally, interstitial gaps form between each of the PoP semiconductor packages disposed on an organic substrate. A curable fluid material, such as a molding compound, may be flowed both in the interstitial spaces between the PoP semiconductor packages and into the gap between the upper surface of the first semiconductor package and the lower surface of the second semiconductor package.

公开(公告)号：US20190103385A1

公开(公告)日：2019-04-04

申请号：US15721235

申请日：2017-09-29

Applicant: Intel Corporation

Inventor： OMKAR KARHADE ,  ROBERT L. SANKMAN ,  NITIN A. DESHPANDE ,  MITUL MODI ,  THOMAS J. DE BONIS ,  ROBERT M. NICKERSON ,  ZHIMIN WAN ,  HAIFA HARIRI ,  SRI CHAITRA J. CHAVALI ,  NAZMIYE ACIKGOZ AKBAY ,  FADI Y. HAFEZ ,  CHRISTOPHER L. RUMER

IPC: H01L25/10 ,  H01L23/367 ,  H01L23/373 ,  H01L25/00

Abstract: The present disclosure is directed to systems and methods for improving heat distribution and heat removal efficiency in PoP semiconductor packages. A PoP semiconductor package includes a first semiconductor package that is physically, communicably, and conductively coupled to a stacked second semiconductor package. A thermally conductive member that includes at least one thermally conductive member may be disposed between the first semiconductor package and the second semiconductor package. The thermally conductive member may include: a single thermally conductive element; multiple thermally conductive elements; or a core that includes at least one thermally conductive element. The thermally conductive elements are thermally conductively coupled to an upper surface of the first semiconductor package and to the lower surface of the second semiconductor package to facilitate the transfer of heat from the first semiconductor package to the second semiconductor package.