公开(公告)号：US20230131126A1

公开(公告)日：2023-04-27

申请号：US18088469

申请日：2022-12-23

Applicant: Intel Corporation

Inventor： Szuya S. LIAO ,  Rahul PANDEY ,  Rishabh MEHANDRU ,  Anupama BOWONDER ,  Pratik PATEL

IPC: H01L29/78 ,  H01L29/66 ,  H01L27/088 ,  H01L29/08

Abstract: Fin shaping, and integrated circuit structures resulting therefrom, are described. For example, an integrated circuit structure includes a semiconductor fin having a protruding fin portion above an isolation structure above a substrate. The protruding fin portion has substantially vertical upper sidewalls and outwardly tapered lower sidewalls. A gate stack is over and conformal with the protruding fin portion of the semiconductor fin. A first source or drain region is at a first side of the gate stack, and a second source or drain region is at a second side of the gate stack opposite the first side of the gate stack.

公开(公告)号：US20210167209A1

公开(公告)日：2021-06-03

申请号：US16700431

申请日：2019-12-02

Applicant: Intel Corporation

Inventor： Szuya S. LIAO ,  Rahul PANDEY ,  Rishabh MEHANDRU ,  Anupama BOWONDER ,  Pratik PATEL

IPC: H01L29/78 ,  H01L29/08 ,  H01L27/088 ,  H01L29/66

Abstract: Fin shaping, and integrated circuit structures resulting therefrom, are described. For example, an integrated circuit structure includes a semiconductor fin having a protruding fin portion above an isolation structure above a substrate. The protruding fin portion has substantially vertical upper sidewalls and outwardly tapered lower sidewalls. A gate stack is over and conformal with the protruding fin portion of the semiconductor fin. A first source or drain region is at a first side of the gate stack, and a second source or drain region is at a second side of the gate stack opposite the first side of the gate stack.