公开(公告)号：US20210020775A1

公开(公告)日：2021-01-21

申请号：US17033444

申请日：2020-09-25

申请人： Intel Corporation

发明人： Uri Bear ,  Elad Peer ,  Elena Sidorov ,  Rami Sudai ,  Reuven Elbaum ,  Steve J. Brown

IPC分类号： H01L29/788 ,  H01L29/423 ,  H01L29/66 ,  G11C16/04

摘要： In one embodiment, memory cell includes a control gate, a floating gate, a substrate comprising a source region and a drain region, a first isolator between the control gate and floating gate, and a second isolator between the floating gate and the substrate. The memory cell is configured to have a retention time that is within a statistical window around a selected lifespan. The selected lifespan may be less than ten years, such as, for example, less than one year, less than one month, or less than one week.

公开(公告)号：US11984512B2

公开(公告)日：2024-05-14

申请号：US17033444

申请日：2020-09-25

申请人： Intel Corporation

发明人： Uri Bear ,  Elad Peer ,  Elena Sidorov ,  Rami Sudai ,  Reuven Elbaum ,  Steve J. Brown

IPC分类号： H01L29/788 ,  G11C16/04 ,  H01L29/423 ,  H01L29/66 ,  H10B41/00 ,  H10B43/00

CPC分类号： H01L29/788 ,  G11C16/0408 ,  H01L29/42324 ,  H01L29/66825 ,  H10B41/00 ,  H10B43/00

摘要： In one embodiment, memory cell includes a control gate, a floating gate, a substrate comprising a source region and a drain region, a first isolator between the control gate and floating gate, and a second isolator between the floating gate and the substrate. The memory cell is configured to have a retention time that is within a statistical window around a selected lifespan. The selected lifespan may be less than ten years, such as, for example, less than one year, less than one month, or less than one week.