公开(公告)号：US11652061B2

公开(公告)日：2023-05-16

申请号：US16442801

申请日：2019-06-17

Applicant: Intel Corporation

Inventor： Shenavia S. Howell ,  John J. Beatty ,  Raymond A. Krick ,  Suzana Prstic

IPC: H01L23/538 ,  H01L23/488 ,  H01L21/78 ,  H01L23/532

CPC classification number: H01L23/5386 ,  H01L21/7806 ,  H01L23/488 ,  H01L23/53242 ,  H01L23/53257

Abstract: Embodiments may relate to a microelectronic package that includes a die and a backside metallization (BSM) layer positioned on the face of the die. The BSM layer may include a feature that indicates that the BSM layer was formed on the face of the die by a masked deposition technique. Other embodiments may be described or claimed.