公开(公告)号：US11476164B2

公开(公告)日：2022-10-18

申请号：US16631352

申请日：2017-09-26

Applicant: Intel Corporation

Inventor： Ying Pang ,  Florian Gstrein ,  Dan S. Lavric ,  Ashish Agrawal ,  Robert Niffenegger ,  Padmanava Sadhukhan ,  Robert W. Heussner ,  Joel M. Gregie

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/66

Abstract: Integrated circuit structures having differentiated workfunction layers are described. In an example, an integrated circuit structure includes a first gate electrode above a substrate. The first gate electrode includes a first workfunction material layer. A second gate electrode is above the substrate. The second gate electrode includes a second workfunction material layer different in composition from the first workfunction material layer. The second gate electrode does not include the first workfunction material layer, and the first gate electrode does not include the second workfunction material layer. A third gate electrode above is the substrate. The third gate electrode includes a third workfunction material layer different in composition from the first workfunction material layer and the second workfunction material layer. The third gate electrode does not include the first workfunction material layer and does not include the second workfunction material layer.