公开(公告)号：US20210036137A1

公开(公告)日：2021-02-04

申请号：US17072992

申请日：2020-10-16

Applicant: Intel Corporation

Inventor： Stephen M. CEA ,  Cory E. WEBER ,  Patrick H. KEYS ,  Seiyon KIM ,  Michael G. HAVERTY ,  Sadasivan SHANKAR

IPC: H01L29/775 ,  H01L29/66 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/417 ,  H01L29/786 ,  H01L29/78

Abstract: Nanowire structures having wrap-around contacts are described. For example, a nanowire semiconductor device includes a nanowire disposed above a substrate. A channel region is disposed in the nanowire. The channel region has a length and a perimeter orthogonal to the length. A gate electrode stack surrounds the entire perimeter of the channel region. A pair of source and drain regions is disposed in the nanowire, on either side of the channel region. Each of the source and drain regions has a perimeter orthogonal to the length of the channel region. A first contact completely surrounds the perimeter of the source region. A second contact completely surrounds the perimeter of the drain region.

公开(公告)号：US20200035818A1

公开(公告)日：2020-01-30

申请号：US16592380

申请日：2019-10-03

Applicant: Intel Corporation

Inventor： Stephen M. CEA ,  Cory E. WEBER ,  Patrick H. KEYS ,  Seiyon KIM ,  Michael G. HAVERTY ,  Sadasivan SHANKAR

IPC: H01L29/775 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/66 ,  H01L29/417 ,  H01L29/786 ,  H01L29/78

Abstract: Nanowire structures having wrap-around contacts are described. For example, a nanowire semiconductor device includes a nanowire disposed above a substrate. A channel region is disposed in the nanowire. The channel region has a length and a perimeter orthogonal to the length. A gate electrode stack surrounds the entire perimeter of the channel region. A pair of source and drain regions is disposed in the nanowire, on either side of the channel region. Each of the source and drain regions has a perimeter orthogonal to the length of the channel region. A first contact completely surrounds the perimeter of the source region. A second contact completely surrounds the perimeter of the drain region.