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公开(公告)号:US20220004495A1
公开(公告)日:2022-01-06
申请号:US17475984
申请日:2021-09-15
Applicant: Intel Corporation
Inventor: Shankar Natarajan , Chace Clark , Francis Corrado , Shivashekar Muralishankar , Suresh Nagarajan
IPC: G06F12/0802 , G06F3/06
Abstract: Systems, apparatuses, and methods provide for a memory controller to manage cache evictions and/or insertions in a data server environment based at least in part on host managed hotness data. For example, a memory controller includes logic to receive a plurality of read and write requests from a host, where the plurality of read and write requests include an associated hotness data. A valid unit count of operational memory cells is maintained on a block-by-block basis for a plurality of memory blocks. A hotness index count is also maintained based at least in part on the hotness data on a block-by-block basis for the plurality of memory blocks. One or more memory blocks of the plurality of memory blocks are selected for eviction from a single level cell region to an x-level cell region based at least in part on the valid unit count and the hotness index count.
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公开(公告)号:US11119672B2
公开(公告)日:2021-09-14
申请号:US16532870
申请日:2019-08-06
Applicant: Intel Corporation
Inventor: Shankar Natarajan , Suresh Nagarajan , Shivashekar Muralishankar , Sriram Natarajan , Yihua Zhang
Abstract: An embodiment of a memory controller device includes technology to control access to a memory array which includes a single-level cell region and a multi-level cell region, determine an amount of valid data in a dynamic portion of the single-level cell region at runtime, and adjust a size of the dynamic portion of the single-level cell region at runtime based on the determined amount of valid data in the dynamic portion of the single-level cell region. Other embodiments are disclosed and claimed.
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公开(公告)号:US20200167089A1
公开(公告)日:2020-05-28
申请号:US16532870
申请日:2019-08-06
Applicant: Intel Corporation
Inventor: Shankar Natarajan , Suresh Nagarajan , Shivashekar Muralishankar , Sriram Natarajan , Yihua Zhang
Abstract: An embodiment of a memory controller device includes technology to control access to a memory array which includes a single-level cell region and a multi-level cell region, determine an amount of valid data in a dynamic portion of the single-level cell region at runtime, and adjust a size of the dynamic portion of the single-level cell region at runtime based on the determined amount of valid data in the dynamic portion of the single-level cell region. Other embodiments are disclosed and claimed.
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