公开(公告)号：US11195998B2

公开(公告)日：2021-12-07

申请号：US16895555

申请日：2020-06-08

Applicant: Intel Corporation

Inventor： Karthik Sarpatwari ,  Dale Collins ,  Anna Maria Conti ,  Fred Daniel Gealy, III ,  Andrea Gotti ,  Swapnil Lengade ,  Stephen Russell

IPC: H01L45/00 ,  G11C13/00

Abstract: A memory structure can include a memory cell and a first barrier layer having a maximum hydrogen diffusion coefficient of 1×10−17 cm2/s, said first barrier layer adjacent to the memory cell to minimize contaminant movement to or from the memory cell.

公开(公告)号：US10680175B1

公开(公告)日：2020-06-09

申请号：US16229544

申请日：2018-12-21

Applicant: Intel Corporation

Inventor： Karthik Sarpatwari ,  Dale Collins ,  Anna Maria Conti ,  Fred Daniel Gealy, III ,  Andrea Gotti ,  Swapnil Lengade ,  Stephen Russell

IPC: H01L45/00 ,  G11C13/00

Abstract: A memory structure can include a memory cell and a first barrier layer having a maximum hydrogen diffusion coefficient of 1×10−17 cm2/s, said first barrier layer adjacent to the memory cell to minimize contaminant movement to or from the memory cell.

公开(公告)号：US20200303642A1

公开(公告)日：2020-09-24

申请号：US16895555

申请日：2020-06-08

Applicant: Intel Corporation

Inventor： Karthik Sarpatwari ,  Dale Collins ,  Anna Maria Conti ,  Fred Daniel Gealy, III ,  Andrea Gotti ,  Swapnil Lengade ,  Stephen Russell

IPC: H01L45/00 ,  G11C13/00

Abstract: A memory structure can include a memory cell and a first barrier layer having a maximum hydrogen diffusion coefficient of 1×10−17 cm2/s, said first barrier layer adjacent to the memory cell to minimize contaminant movement to or from the memory cell.

公开(公告)号：US11133461B2

公开(公告)日：2021-09-28

申请号：US14497801

申请日：2014-09-26

Applicant: Intel Corporation

Inventor： Christopher Petz ,  Dale Collins ,  Tsz-Wah Chan ,  Swapnil Lengade ,  Yongjun Hu ,  Allen McTeer

IPC: H01L45/00 ,  H01L21/768 ,  H01L27/24

Abstract: Devices and systems having a diffusion barrier for limiting diffusion of a phase change material including an electrode, a phase change material electrically coupled to the electrode, and a carbon and TiN (C:TiN) diffusion barrier disposed between the electrode and the phase change material to limit diffusion of the phase change material are disclosed and described.