公开(公告)号：US20200303642A1

公开(公告)日：2020-09-24

申请号：US16895555

申请日：2020-06-08

Applicant: Intel Corporation

Inventor： Karthik Sarpatwari ,  Dale Collins ,  Anna Maria Conti ,  Fred Daniel Gealy, III ,  Andrea Gotti ,  Swapnil Lengade ,  Stephen Russell

IPC: H01L45/00 ,  G11C13/00

Abstract: A memory structure can include a memory cell and a first barrier layer having a maximum hydrogen diffusion coefficient of 1×10−17 cm2/s, said first barrier layer adjacent to the memory cell to minimize contaminant movement to or from the memory cell.

公开(公告)号：US11195998B2

公开(公告)日：2021-12-07

申请号：US16895555

申请日：2020-06-08

Applicant: Intel Corporation

Inventor： Karthik Sarpatwari ,  Dale Collins ,  Anna Maria Conti ,  Fred Daniel Gealy, III ,  Andrea Gotti ,  Swapnil Lengade ,  Stephen Russell

IPC: H01L45/00 ,  G11C13/00

Abstract: A memory structure can include a memory cell and a first barrier layer having a maximum hydrogen diffusion coefficient of 1×10−17 cm2/s, said first barrier layer adjacent to the memory cell to minimize contaminant movement to or from the memory cell.

公开(公告)号：US10680175B1

公开(公告)日：2020-06-09

申请号：US16229544

申请日：2018-12-21

Applicant: Intel Corporation

Inventor： Karthik Sarpatwari ,  Dale Collins ,  Anna Maria Conti ,  Fred Daniel Gealy, III ,  Andrea Gotti ,  Swapnil Lengade ,  Stephen Russell

IPC: H01L45/00 ,  G11C13/00

Abstract: A memory structure can include a memory cell and a first barrier layer having a maximum hydrogen diffusion coefficient of 1×10−17 cm2/s, said first barrier layer adjacent to the memory cell to minimize contaminant movement to or from the memory cell.

公开(公告)号：US10185818B2

公开(公告)日：2019-01-22

申请号：US15438346

申请日：2017-02-21

Applicant: Intel Corporation

Inventor： Karthik Sarpatwari ,  Hongmei Wang ,  Sanjay Rangan

IPC: G06F7/58 ,  G06F21/44 ,  G09C1/00 ,  G11C13/00 ,  H04L9/08 ,  H04L9/32

Abstract: Devices and systems operable to generate random numbers are disclosed and described. Such include an array of phase change material cells electrically coupled to circuitry configured to initially set all cells in the array to a high state, send a programming pulse through the array having a current sufficient to randomly set each cell to either the high state or a low state to generate a random distribution of cell states across the array, and to read the random distribution of cell states out of the array.

公开(公告)号：US20170161488A1

公开(公告)日：2017-06-08

申请号：US15438346

申请日：2017-02-21

Applicant: Intel Corporation

Inventor： Karthik Sarpatwari ,  Hongmei Wang ,  Sanjay Rangan

IPC: G06F21/44 ,  G11C13/00 ,  G06F7/58

CPC classification number: G06F21/44 ,  G06F7/58 ,  G06F7/588 ,  G09C1/00 ,  G11C13/0004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2013/0092 ,  H04L9/0866 ,  H04L9/3278 ,  H04L2209/12

Abstract: Devices and systems operable to generate random numbers are disclosed and described. Such include an array of phase change material cells electrically coupled to circuitry configured to initially set all cells in the array to a high state, send a programming pulse through the array having a current sufficient to randomly set each cell to either the high state or a low state to generate a random distribution of cell states across the array, and to read the random distribution of cell states out of the array.