公开(公告)号：US20200035560A1

公开(公告)日：2020-01-30

申请号：US16316330

申请日：2017-08-25

Applicant: Intel Corporation

Inventor： Bruce BLOCK ,  Valluri R. RAO ,  Patrick MORROW ,  Rishabh MEHANDRU ,  Doug INGERLY ,  Kimin JUN ,  Kevin O'BRIEN ,  Patrick MORROW ,  Szyua S. LIAO

IPC: H01L21/822 ,  H01L29/04 ,  H01L29/08 ,  H01L23/528 ,  H01L23/00 ,  H01L29/16 ,  H01L29/20 ,  H01L27/092 ,  H01L27/12 ,  H01L23/532 ,  H01L21/8238 ,  H01L21/306 ,  H01L21/683 ,  H01L29/06 ,  H01L21/66

Abstract: Integrated circuit cell architectures including both front-side and back-side structures. One or more of back-side implant, semiconductor deposition, dielectric deposition, metallization, film patterning, and wafer-level layer transfer is integrated with front-side processing. Such double-side processing may entail revealing a back side of structures fabricated from the front-side of a substrate. Host-donor substrate assemblies may be built-up to support and protect front-side structures during back-side processing. Front-side devices, such as FETs, may be modified and/or interconnected during back-side processing. Back-side devices, such as FETs, may be integrated with front-side devices to expand device functionality, improve performance, or increase device density.