公开(公告)号：US20210057230A1

公开(公告)日：2021-02-25

申请号：US16954419

申请日：2018-03-28

Applicant: Intel Corporation

Inventor： James M. BLACKWELL ,  Tayseer MAHDI

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/033 ,  C23C16/26 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417

Abstract: Carbon-based dielectric materials for semiconductor structure fabrication, and the resulting structures, are described. In an example, method of patterning a layer for a semiconductor structure includes forming a plurality of trenches in a dielectric layer above a semiconductor layer above a substrate to form a patterned dielectric layer. The method also includes filling the plurality of trenches with an adamantane-based carbon hardmask material. The method also includes removing the patterned dielectric layer selective to the adamantane-based carbon hardmask material. The method also includes using the adamantane-based carbon hardmask material to pattern the semiconductor layer.

公开(公告)号：US20210057337A1

公开(公告)日：2021-02-25

申请号：US16956251

申请日：2018-03-26

Applicant: Intel Corporation

Inventor： Eungnak HAN ,  Tayseer MAHDI ,  Rami HOURANI ,  Gurpreet SINGH ,  Florian GSTREIN

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/528 ,  G03F7/20

Abstract: Multifunctional molecules for selective polymer formation on conductive surfaces, and the resulting structures, are described. In an example, an integrated circuit structure includes a lower metallization layer including alternating metal lines and dielectric lines above the substrate. A molecular brush layer is on the metal lines of the lower metallization layer, the molecular brush layer including multifunctional molecules. A triblock copolymer layer is above the lower metallization layer. The triblock copolymer layer includes a first segregated block component over the dielectric lines of the lower metallization layer, and alternating second and third segregated block components on the molecular brush layer on the metal lines of the lower metallization layer, where the third segregated block component is photosensitive.