公开(公告)号：US20240105860A1

公开(公告)日：2024-03-28

申请号：US17955235

申请日：2022-09-28

Applicant: Intel Corporation

Inventor： Abhishek Anil Sharma ,  Tahir Ghani ,  WIlfred Gomes ,  Anand Murthy ,  Sagar Suthram ,  Pushkar Ranade

IPC: H01L29/93 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L29/93 ,  H01L29/40111 ,  H01L29/516 ,  H01L29/66174

Abstract: An integrated circuit (IC) die includes a plurality of varactor devices, where at least one varactor of the plurality of varactor devices comprises a first electrode, a second electrode, and a multi-layer stack of ferroelectric material (e.g., ferroelectric variable capacitance material) disposed between the first and second electrodes. Other embodiments are disclosed and claimed.