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公开(公告)号:US20230033277A1
公开(公告)日:2023-02-02
申请号:US17390425
申请日:2021-07-30
Applicant: Intel Corporation
Inventor: William K. Waller , Dhruval J. Patel , Xiannan Di
Abstract: Techniques for repair of a memory die are disclosed. In the illustrative embodiment, a faulty wordline (or bitline) can be remapped to a redundant wordline on the same layer by entering the address of the faulty wordline in a repair table for the layer. If there are more faulty wordlines on a layer than redundant wordlines available on the layer, the faulty wordlines can be remapped to redundant wordlines on a different layer, and the address of the faulty wordline can be placed in a repair table for the different layer. When a memory operation is received, the wordline address for the memory operation is checked against the repair tables to check if it remapped.
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公开(公告)号:US12277985B2
公开(公告)日:2025-04-15
申请号:US17390425
申请日:2021-07-30
Applicant: Intel Corporation
Inventor: William K. Waller , Dhruval J. Patel , Xiannan Di
Abstract: Techniques for repair of a memory die are disclosed. In the illustrative embodiment, a faulty wordline (or bitline) can be remapped to a redundant wordline on the same layer by entering the address of the faulty wordline in a repair table for the layer. If there are more faulty wordlines on a layer than redundant wordlines available on the layer, the faulty wordlines can be remapped to redundant wordlines on a different layer, and the address of the faulty wordline can be placed in a repair table for the different layer. When a memory operation is received, the wordline address for the memory operation is checked against the repair tables to check if it remapped.
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