TECHNOLOGIES FOR REPAIR OF MEMORY WITH ACCESS LINES

    公开(公告)号:US20230033277A1

    公开(公告)日:2023-02-02

    申请号:US17390425

    申请日:2021-07-30

    Abstract: Techniques for repair of a memory die are disclosed. In the illustrative embodiment, a faulty wordline (or bitline) can be remapped to a redundant wordline on the same layer by entering the address of the faulty wordline in a repair table for the layer. If there are more faulty wordlines on a layer than redundant wordlines available on the layer, the faulty wordlines can be remapped to redundant wordlines on a different layer, and the address of the faulty wordline can be placed in a repair table for the different layer. When a memory operation is received, the wordline address for the memory operation is checked against the repair tables to check if it remapped.

    Technologies for repair of memory with access lines

    公开(公告)号:US12277985B2

    公开(公告)日:2025-04-15

    申请号:US17390425

    申请日:2021-07-30

    Abstract: Techniques for repair of a memory die are disclosed. In the illustrative embodiment, a faulty wordline (or bitline) can be remapped to a redundant wordline on the same layer by entering the address of the faulty wordline in a repair table for the layer. If there are more faulty wordlines on a layer than redundant wordlines available on the layer, the faulty wordlines can be remapped to redundant wordlines on a different layer, and the address of the faulty wordline can be placed in a repair table for the different layer. When a memory operation is received, the wordline address for the memory operation is checked against the repair tables to check if it remapped.

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