公开(公告)号：US20240222514A1

公开(公告)日：2024-07-04

申请号：US18090056

申请日：2022-12-28

Applicant: Intel Corporation

Inventor： Christopher Connor ,  Vishak Venkatraman ,  Vladimir Nikitin ,  Yasin Kaya

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78696

Abstract: An integrated circuit structure includes a first layer comprising a semiconductor material. In an example, the semiconductor material of the layer comprises an oxide semiconductor material (e.g., comprising a metal and oxygen). The integrated circuit structure further includes a second layer above the first layer, where the second layer includes a metal and one of oxygen or nitrogen (e.g., includes aluminum and oxygen). In an example, the second layer is an etch stop layer. In an example, the second layer has a thickness of at most 20 nanometers. The integrated circuit structure further includes a first source or drain terminal and a second source or drain terminal, where each of the first and second source or drain terminals extends through the second layer and is coupled to the first layer. In an example, the integrated circuit structure is a thin film transistor (TFT), where the first layer is a thin film channel structure of the TFT.