公开(公告)号：US20240222514A1

公开(公告)日：2024-07-04

申请号：US18090056

申请日：2022-12-28

Applicant: Intel Corporation

Inventor： Christopher Connor ,  Vishak Venkatraman ,  Vladimir Nikitin ,  Yasin Kaya

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78696

Abstract: An integrated circuit structure includes a first layer comprising a semiconductor material. In an example, the semiconductor material of the layer comprises an oxide semiconductor material (e.g., comprising a metal and oxygen). The integrated circuit structure further includes a second layer above the first layer, where the second layer includes a metal and one of oxygen or nitrogen (e.g., includes aluminum and oxygen). In an example, the second layer is an etch stop layer. In an example, the second layer has a thickness of at most 20 nanometers. The integrated circuit structure further includes a first source or drain terminal and a second source or drain terminal, where each of the first and second source or drain terminals extends through the second layer and is coupled to the first layer. In an example, the integrated circuit structure is a thin film transistor (TFT), where the first layer is a thin film channel structure of the TFT.

公开(公告)号：US20230317615A1

公开(公告)日：2023-10-05

申请号：US17708051

申请日：2022-03-30

Applicant: Intel Corporation

Inventor： Deepyanti Taneja ,  Travis W. Lajoie ,  Abhishek Anil Sharma ,  Gregory J. George ,  Tarannum Tiasha ,  Huiying Liu ,  Yue Liu ,  Moshe Dolejsi ,  Vinaykumar V. Hadagali ,  Shardul Wadekar ,  Vladimir Nikitin ,  Albert B. Chen ,  Daniel J. Schinke ,  James O'Donnell

IPC: H01L23/532 ,  H01L27/12

CPC classification number: H01L23/53295 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1255 ,  H01L23/5226

Abstract: An integrated circuit includes a first layer, and a second layer above the first layer. A third layer is between a first section of the first layer and a first section of the second layer. A fourth layer is laterally adjacent to the third layer, the fourth layer between a second section of the first layer and a second section of the second layer. In an example, a first dielectric material of the third layer is different (e.g., one or both of compositionally different and structurally different) from a second dielectric material of the fourth layer. In an example, the third and fourth layers are etch stop layers. In some cases, the third and fourth layers are coplanar with each other with respect to their top surfaces, or their bottom surfaces, or both their top and bottom surfaces.