公开(公告)号：US09001554B2

公开(公告)日：2015-04-07

申请号：US13738061

申请日：2013-01-10

申请人： Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

发明人： Imran Hashim ,  Ryan C. Clarke ,  Nan Lu ,  Tim Minvielle ,  Takeshi Yamaguchi

IPC分类号： H01L45/00 ,  G11C13/00

CPC分类号： H01L45/146 ,  G11C11/56 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/77 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253

摘要： Provided are resistive random access memory (ReRAM) cells, each having three or more resistive states and being capable of storing multiple bits of data, as well as methods of fabricating and operating such ReRAM cells. Such ReRAM cells or, more specifically, their resistive switching layer have wide range of resistive states and are capable of being very conductive (e.g., about 1 kOhm) in one state and very resistive (e.g., about 1 MOhm) in another state. In some embodiments, a resistance ratio between resistive states may be between 10 and 1,000 even up to 10,000. The resistive switching layers also allow establishing stable and distinct intermediate resistive states that may be assigned different data values. These layers may be configured to switching between their resistive states using fewer programming pulses than conventional systems by using specific materials, switching pluses, and resistive state threshold.

摘要翻译： 提供了电阻随机存取存储器（ReRAM）单元，每个单元具有三个或更多个电阻状态，并且能够存储多个数据位，以及制造和操作这样的ReRAM单元的方法。 这样的ReRAM单元或更具体地，它们的电阻式开关层具有宽范围的电阻状态，并且在另一状态下能够在一种状态下非常导电（例如，约1kOhm），并且在另一状态下具有很强的电阻（例如约1MOhm）。 在一些实施例中，电阻状态之间的电阻比可以在10和1,000之间甚至高达10,000。 电阻式开关层还允许建立可分配不同数据值的稳定和不同的中间电阻状态。 这些层可以被配置为使用比常规系统更少的编程脉冲在其电阻状态之间切换，通过使用特定的材料，开关和电阻状态阈值。

公开(公告)号：US20140192585A1

公开(公告)日：2014-07-10

申请号：US13738061

申请日：2013-01-10

申请人： INTERMOLECULAR INC. ,  KABUSHIKI KAISHA TOSHIBA ,  SANDISK 3D LLC

发明人： Imran Hashim ,  Ryan C. Clarke ,  Nan Lu ,  Tim Minvielle ,  Takeshi Yamaguchi

IPC分类号： G11C13/00 ,  H01L45/00

CPC分类号： H01L45/146 ,  G11C11/56 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/77 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253

摘要： Provided are resistive random access memory (ReRAM) cells, each having three or more resistive states and being capable of storing multiple bits of data, as well as methods of fabricating and operating such ReRAM cells. Such ReRAM cells or, more specifically, their resistive switching layer have wide range of resistive states and are capable of being very conductive (e.g., about 1 kOhm) in one state and very resistive (e.g., about 1 MOhm) in another state. In some embodiments, a resistance ratio between resistive states may be between 10 and 1,000 even up to 10,000. The resistive switching layers also allow establishing stable and distinct intermediate resistive states that may be assigned different data values. These layers may be configured to switching between their resistive states using fewer programming pulses than conventional systems by using specific materials, switching pluses, and resistive state threshold.

摘要翻译： 提供了电阻随机存取存储器（ReRAM）单元，每个单元具有三个或更多个电阻状态，并且能够存储多个数据位，以及制造和操作这样的ReRAM单元的方法。 这样的ReRAM单元或更具体地，它们的电阻式开关层具有宽范围的电阻状态，并且在另一状态下能够在一种状态下非常导电（例如，约1kOhm），并且在另一状态下具有很强的电阻（例如约1MOhm）。 在一些实施例中，电阻状态之间的电阻比可以在10和1,000之间甚至高达10,000。 电阻式开关层还允许建立可分配不同数据值的稳定和不同的中间电阻状态。 这些层可以被配置为使用比常规系统更少的编程脉冲在其电阻状态之间切换，通过使用特定的材料，开关和电阻状态阈值。

公开(公告)号：US09178148B2

公开(公告)日：2015-11-03

申请号：US14636421

申请日：2015-03-03

申请人： Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

发明人： Imran Hashim ,  Ryan C. Clarke ,  Nan Lu ,  Tim Minvielle ,  Takeshi Yamaguchi

IPC分类号： H01L45/00 ,  G11C13/00 ,  G11C11/56

CPC分类号： H01L45/146 ,  G11C11/56 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/77 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253

摘要： Provided are resistive random access memory (ReRAM) cells, each having three or more resistive states and being capable of storing multiple bits of data, as well as methods of fabricating and operating such ReRAM cells. Such ReRAM cells or, more specifically, their resistive switching layer have wide range of resistive states and are capable of being very conductive (e.g., about 1 kOhm) in one state and very resistive (e.g., about 1 MOhm) in another state. In some embodiments, a resistance ratio between resistive states may be between 10 and 1,000 even up to 10,000. The resistive switching layers also allow establishing stable and distinct intermediate resistive states that may be assigned different data values. These layers may be configured to switching between their resistive states using fewer programming pulses than conventional systems by using specific materials, switching pluses, and resistive state threshold.

公开(公告)号：US20150171323A1

公开(公告)日：2015-06-18

申请号：US14636421

申请日：2015-03-03

申请人： Intermolecular Inc. ,  KABUSHIKI KAISHA TOSHIBA ,  SanDisk 3D LLC

发明人： Imran Hashim ,  Ryan C. Clarke ,  Nan Lu ,  Tim Minvielle ,  Takeshi Yamaguchi

IPC分类号： H01L45/00

CPC分类号： H01L45/146 ,  G11C11/56 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/77 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253

摘要： Provided are resistive random access memory (ReRAM) cells, each having three or more resistive states and being capable of storing multiple bits of data, as well as methods of fabricating and operating such ReRAM cells. Such ReRAM cells or, more specifically, their resistive switching layer have wide range of resistive states and are capable of being very conductive (e.g., about 1 kOhm) in one state and very resistive (e.g., about 1 MOhm) in another state. In some embodiments, a resistance ratio between resistive states may be between 10 and 1,000 even up to 10,000. The resistive switching layers also allow establishing stable and distinct intermediate resistive states that may be assigned different data values. These layers may be configured to switching between their resistive states using fewer programming pulses than conventional systems by using specific materials, switching pluses, and resistive state threshold.

摘要翻译： 提供了电阻随机存取存储器（ReRAM）单元，每个单元具有三个或更多个电阻状态，并且能够存储多个数据位，以及制造和操作这样的ReRAM单元的方法。 这样的ReRAM单元或更具体地，它们的电阻式开关层具有宽范围的电阻状态，并且在另一状态下能够在一种状态下非常导电（例如，约1kOhm），并且在另一状态下具有很强的电阻（例如约1MOhm）。 在一些实施例中，电阻状态之间的电阻比可以在10和1,000之间甚至高达10,000。 电阻式开关层还允许建立可分配不同数据值的稳定和不同的中间电阻状态。 这些层可以被配置为使用比常规系统更少的编程脉冲在其电阻状态之间切换，通过使用特定的材料，开关和电阻状态阈值。