公开(公告)号：US20160071956A1

公开(公告)日：2016-03-10

申请号：US14479252

申请日：2014-09-05

申请人： International Business Machine Corporation

发明人： Karthik Balakrishnan ,  John Bruley ,  Pouya Hashemi ,  Ali Khakifirooz ,  John A. Ott ,  Alexander Reznicek

IPC分类号： H01L29/66 ,  H01L29/161 ,  H01L29/06 ,  H01L21/311 ,  H01L21/324 ,  H01L29/78 ,  H01L21/306

CPC分类号： H01L29/161 ,  H01L21/18 ,  H01L21/30604 ,  H01L21/31144 ,  H01L21/324 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/1054 ,  H01L29/66818 ,  H01L29/785

摘要： Thermal condensation is employed to obtain a finned structure including strained silicon germanium fins having vertical side walls and a germanium content that may be high relative to silicon. A hard mask is used directly on a low-germanium content silicon germanium layer. The hard mask is patterned and fins are formed beneath the hard mask from the silicon germanium layer. Thermal condensation in an oxidizing ambient causes the formation of regions beneath the hard mask that have a high germanium content. The hard mask is trimmed to a target critical dimension. The regions beneath the hard mask and adjoining oxide material are subjected to reactive ion etch, resulting in the formation of high-germanium content fins with planar, vertically extending sidewalls.