公开(公告)号：US20180322238A1

公开(公告)日：2018-11-08

申请号：US16037039

申请日：2018-07-17

Applicant: International Business Machines Corporation

Inventor： Michael A. Guillorn ,  Kafai Lai ,  Chi-Chun Liu ,  Ananthan Raghunathan ,  Hsinyu Tsai

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G06F17/5068 ,  G06F2217/12 ,  H01L29/66795

Abstract: A method for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern, the method comprising: inserting a first external dummy along an external edge of the guiding pattern in a vertical direction; and inserting a second external dummy at a fixed distance from a second edge of the first external dummy, wherein the second external dummy includes a two-dimensional shape such that at least two edges of the second external dummy are parallel to the second edge of the first external dummy.

公开(公告)号：US10949601B2

公开(公告)日：2021-03-16

申请号：US16729706

申请日：2019-12-30

Applicant: International Business Machines Corporation

Inventor： Michael A. Guillorn ,  Kafai Lai ,  Chi-Chun Liu ,  Ananthan Raghunathan ,  Hsinyu Tsai

IPC: G06F30/398 ,  G06F30/39 ,  H01L29/66 ,  G06F119/18

Abstract: A method for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern, the method comprising expanding a shape of the guiding pattern by a predetermined distance in both lateral directions to form a fin keep mask, where the fin keep mask comprises a stand-alone mask.

公开(公告)号：US10606980B2

公开(公告)日：2020-03-31

申请号：US16037039

申请日：2018-07-17

Applicant: International Business Machines Corporation

Inventor： Michael A. Guillorn ,  Kafai Lai ,  Chi-Chun Liu ,  Ananthan Raghunathan ,  Hsinyu Tsai

IPC: G06F17/50 ,  H01L29/66

Abstract: A method for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern, the method comprising: inserting a first external dummy along an external edge of the guiding pattern in a vertical direction; and inserting a second external dummy at a fixed distance from a second edge of the first external dummy, wherein the second external dummy includes a two-dimensional shape such that at least two edges of the second external dummy are parallel to the second edge of the first external dummy.

公开(公告)号：US10114921B2

公开(公告)日：2018-10-30

申请号：US15697594

申请日：2017-09-07

Applicant: International Business Machines Corporation

Inventor： Michael A. Guillorn ,  Kafai Lai ,  Chi-Chun Liu ,  Ananthan Raghunathan ,  Hsinyu Tsai

IPC: G06F17/50 ,  H01L29/66

Abstract: A method, system, and non-transitory computer readable medium for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern include inserting an internal dummy between a first portion of the guiding pattern and a second portion of the guiding pattern if a vertical spacing is equal to or greater than a first predetermined distance, inserting a first external dummy along an external edge of the guiding pattern in a vertical direction if the vertical spacing is greater than a second predetermined distance, and inserting an anti-taper structure on the first external dummy if a second distance from the external edge of the guiding pattern to an edge of the first external dummy is greater than a first distance.

公开(公告)号：US20170371999A1

公开(公告)日：2017-12-28

申请号：US15697594

申请日：2017-09-07

Applicant: International Business Machines Corporation

Inventor： Michael A. Guillorn ,  Kafai Lai ,  Chi-Chun Liu ,  Ananthan Raghunathan ,  Hsinyu Tsai

IPC: G06F17/50 ,  H01L29/66

CPC classification number: G06F17/5081 ,  G06F17/5068 ,  G06F2217/12 ,  H01L29/66795

Abstract: A method, system, and non-transitory computer readable medium for reducing chemo-epitaxy directed-self assembly (DSA) defects of a guiding pattern layout, include inserting an internal dummy between a first portion of the guiding pattern and a second portion of the guiding pattern if a vertical spacing is equal to or greater than a first predetermined distance, inserting a first external dummy along an external edge of the guiding pattern in a vertical direction if the vertical spacing is greater than a second predetermined distance, and inserting an anti-taper structure on the first external dummy if a second distance from the external edge of the guiding pattern to the edge of the first external dummy is greater than a first distance.

公开(公告)号：US09852260B2

公开(公告)日：2017-12-26

申请号：US15167247

申请日：2016-05-27

Applicant: International Business Machines Corporation

Inventor： Michael A. Guillorn ,  Kafai Lai ,  Chi-Chun Liu ,  Ananthan Raghunathan ,  Hsinyu Tsai

IPC: G06F17/50 ,  H01L29/66

CPC classification number: G06F17/5081 ,  G06F17/5068 ,  G06F2217/12 ,  H01L29/66795

Abstract: A method, system, and non-transitory computer readable medium for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern, include inserting an internal dummy between a first portion of the guiding pattern and a second portion of the guiding pattern if a vertical spacing is equal to or greater than a first predetermined distance, inserting a first external dummy along an external edge of the guiding pattern in a vertical direction if the vertical spacing is greater than a second predetermined distance, and inserting an anti-taper structure on the first external dummy if a second distance from the external edge of the guiding pattern to the edge of the first external dummy is greater than a first distance.

公开(公告)号：US20170344694A1

公开(公告)日：2017-11-30

申请号：US15167247

申请日：2016-05-27

Applicant: International Business Machines Corporation

Inventor： Michael A. Guillorn ,  Kafai Lai ,  Chi-Chun Liu ,  Ananthan Raghunathan ,  Hsinyu Tsai

IPC: G06F17/50 ,  H01L29/66

CPC classification number: G06F17/5081 ,  G06F17/5068 ,  G06F2217/12 ,  H01L29/66795

Abstract: A method, system, and non-transitory computer readable medium for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern, include inserting an internal dummy between a first portion of the guiding pattern and a second portion of the guiding pattern if a vertical spacing is equal to or greater than a first predetermined distance, inserting a first external dummy along an external edge of the guiding pattern in a vertical direction if the vertical spacing is greater than a second predetermined distance, and inserting an anti-taper structure on the first external dummy if a second distance from the external edge of the guiding pattern to the edge of the first external dummy is greater than a first distance.